Comparative Performance and Reliability Analysis of Doping and Junction Free Devices with High-κ/Vacuum Gate Dielectric

A comparative evaluation of channel hot carrier (CHC) reliability and pursuance dopingless FET (DL JLFET) junctionless (JLFET) are studied for various dielectrics compared with conventional dielectric (SiO2) JLFET. The use such as vacuum near the drain high-κ (HfO2) source in DL JLFET (VacuHDL allows better against effects. simulation study has shown that VacuHDL terms Ion/Ioff ratio is improved by 4.5, 19.38 39.58 times, respectively, comparison based DL, HJL JL. Similarly, intrinsic delay 9.5%, 56.8% 58.7%, VacuDL, VacuHJL VacuJL. Hence, a potential candidate digital circuit applications. Further, we have found vacuum-based HDL more immunes CHC stress current vacuHDL vacuHJL reduced 6.9% 17.5%, dialectic JL which 10.4% 20.5%. incorporation towards terminal helpful reducing induced effect dielectric.